Figure 4: Using the SB-MOSFET model to extract SB heights of BP.
From: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
(a) Plots showing fits to the experimental data (open circles) using our SB-MOSFET model. The x axis of the experimental Ids−Vgs data was rescaled to account for the effect of Cit as discussed in the text. (b) The extracted Schottky barriers for different flake thicknesses of BP. Open circles (blue and red) represent SB-MOSFETs with permalloy contacts. Filled triangles (blue and red) represent SB-MOSFETs with palladium contacts. The y error bar captures the uncertainty in the measured transfer characteristic of a single device due to commonly observed hysteresis effects, charging of the substrate and so on. It also captures the uncertainty associated with the fit. The x error bar captures the error in the AFM thickness measurement (see text). (c) Plot of bandgap versus flake thickness. Eg was calculated as the sum of the electron and hole Schottky barriers from b. Our data are in excellent agreement with a power-law fit from DFT simulations reported by Tran et al.37 Green squares [A]39 and [B]40 are experimental data from the literature.
