Fig. 2: Second-harmonic generation.
a Simulated effective mode index of 1550 nm TE00 and 775 nm TM00 modes of 108 nm (dashed), 110 nm (solid), and 112 nm (dotted) thick InGaP waveguides with 35 nm Al2O3 cladding. Inset is a cross section of the waveguide along with the electric field distribution of the two modes. b SEM images of a fabricated InGaP waveguide device. c Measured SHG spectrum for a 1.6 mm long waveguide device with a pump power of 1.56 mW. d Quadratic relation between the peak SHG power and the pump power. e Temperature tuning of the phase-matching condition. f Normalized SHG efficiency and 1550 nm wavelength band loss of the telecommunication C band waveguide SHG of several thin-film second-order nonlinear photonics platforms. InGaP: this work, PPLN:25, Al0.27Ga0.73As:48, GaP:49, SiC:50
