Table 2 Summary of inter-chip edge coupler devices

SOI to SOI^a

H-bar MMI

0.32 0.56

TE TM

/

/

/

>40(1530–1570)

241 × 2 × 5

Parallel

Custom

⁸⁸

Ge-on-Si to Ge-on-Si

OCQ

4.1

/

±2

±1.25

0.5

/ (8400)

16 × 12 × 4

Parallel

Custom

^81,82,83

III-V to SOI

Trident taper

2

/

±1.4

±0.35

1.4

60 (1490–1550)

96 × 9.6 × 0.22

Parallel

Standard

⁷⁹

InP to SOI

Inverse taper

0.25

/

±0.7

±0.5

/

120 (1510–1630)

75 × 0.4

Parallel

Standard

⁷⁶

InP to SOI

Meta-material

0.9

/

±1.7

±0.5

/

120 (1510–1630)

250 × 0.4

Parallel

Standard

⁷⁶

Polymer to polymer^a

MMI

1.0

/

±2

/

/

90 (1510–1600)

173 × 4 × 10.4

Parallel

New

⁸⁹

Si₃N₄ to ULI

Inverse taper

2.8

/

±1.5

±1.8

/

/ (1550)

200 (L)

Serial

New

¹⁶³

InP to SOI

Inverse taper

1.6

/

±1.5

±1

/

45 (1515–1560)

600 × 3

Parallel

Standard

⁷⁸

GaSb to SOI

Angled facet & taper

1.46

TE

>±1

±0.13

0.75

/ (1881–1947)

200 × 6 × 1

Parallel

Custom

⁸⁵

GaSb to SOI

Angled facet & taper

2.7

TE

/

/

/

/ (1955–1992)

200 × 6 × 1

Parallel

Custom

⁸⁴

GaSb to SOI

Angled facet

1.8

TE

±0.45

±0.97

1.46

/ (2000)

5 × 3(W × H)

Parallel

Standard

⁴⁸

InP to SiN

Inverse taper

1.5

/

±0.5

±0.4

1.1

/ (1550)

2.15 (W)

Parallel

Standard

⁷⁵

Polymer to polymer^a

MMI

7.05

/

/

/

/

/ (1550)

486 × 18 × 18

Parallel

New

⁹¹

SiN_x to SiN_x

GRIN

0.33 0.41

TE TM

±2.38

±2.24 11(rise)

/

>360(1280–1640)

66 × 11 × 11

Parallel

Custom

³²²

SOI to SOI

GRIN

0.35 0.43

TE TM

±2.38

±2.24 11(rise)

/

>360(1280–1640)

66 × 11 × 11

Parallel

Custom

³²²

GaSb to SOI

Angled facet

1.94

/

/

/

1.59^b

/ (2000)

3.1 × 5.4(W × H)

Parallel

New

⁸⁷

Polymer to polymer^a

MMI

2.4

/

± 0.5^c

23(rise)

/

40 (1300–1340)

3223 × 7.7 × 22.5

Parallel

New

⁹³