Fig. 3
From: Bioinspired phototransistor with tunable sensitivity for low-contrast target detection
Optoelectronic performance of the tunable-sensitivity phototransistor. a Photo-response behavior of the device under 516-nm light pulses (pulse width: 100 ms) at varying light intensity (Pin) and gate voltage (VGS) pulse from 0 to −9 V (pulse width: 100 ms). VDS = 0.1 V. b Dependence of IDS on Pin under 516-nm light at different VGS. c Variation of the current ratio (tunable-sensitivity phototransistor: I0/Ilight; conventional phototransistor: Ilight/I0) as a function of the light intensity ratio (Pin/P0) at different VGS, where P0 represents the minimum detectable light intensity, and I0 is the corresponding current. d Comparison of responsivity (R = |ILight−IDark|/Pin) of the tunable-sensitivity phototransistor and conventional phototransistor under different Pin
