Fig. 2: Strain and Structure Optimization. | Light: Science & Applications

Fig. 2: Strain and Structure Optimization.

From: Over 1.65 GW cm−2 sr−1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL

Fig. 2: Strain and Structure Optimization.

a The designed “flip-chip” epitaxial structure; b Calculated gain spectra of the QWs with different thicknesses and indium contents; c Calculated GaAsP thickness required to fully compensate the InGaAs layer; d Refractive index and standing-wave electric field distribution within the chip

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