Fig. 3: Epitaxial Growth and Characterization of Sample 1. | Light: Science & Applications

Fig. 3: Epitaxial Growth and Characterization of Sample 1.

From: Over 1.65 GW cm−2 sr−1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL

Fig. 3: Epitaxial Growth and Characterization of Sample 1.

a The growth temperature of each layer is shown, with the red and blue lines representing two different samples; b The transmission electron microscopy image; c Measured secondary ion mass spectrometry (SIMS); d Atomic force microscope; e Photoluminescence spectrum before and after annealing; f Statistical PL peak wavelength, peak intensity, full width, and indium component at a six-inch wafer

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