Fig. 4: Epitaxial growth and characterization of Sample 2. | Light: Science & Applications

Fig. 4: Epitaxial growth and characterization of Sample 2.

From: Over 1.65 GW cm−2 sr−1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL

Fig. 4: Epitaxial growth and characterization of Sample 2.

a Measured secondary ion mass spectrometry (SIMS); b Atomic force microscope; c Photoluminescence spectrum before and after annealing; d Statistical PL peak wavelength, peak intensity, full width, and indium component at a six-inch wafer; e High-resolution X-ray diffraction of the two samples; f Statistical full width at half maximum of different diffraction peaks

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