Fig. 3: Evaluation of pattern transfer fidelity.
From: Gradient wettability induced by deterministically patterned nanostructures
a Imprinted COC film. b SEM image of COC nanopillars viewed with a tilting angle of 45°. c Top-view SEM images of representative structures on the imprinted COC film at different positions. d Filling ratios of the photoresist pattern and COC film at the corresponding positions. e, f AFM height images and cross-sections of nanoholes on the photoresist and imprinted COC film. The white dashed lines in the AFM images mark the positions of the cross-sections. The scale bar is 200 nm
