Fig. 5: Device stability study for the heterojunction device under real-time environment.
From: Voltage-controlled NiO/ZnO p–n heterojunction diode: a new approach towards selective VOC sensing
Plots showing the a effect of humidity (varied from 20 to 80% RH) on the performance of the NiO/ZnO sensor device. b Device stability analysis over a period of 3 weeks. All measurements were performed at a VOC concentration of ~57 ppm
