Fig. 6: T-CAD simulation results demonstrating device performance.
From: Voltage-controlled NiO/ZnO p–n heterojunction diode: a new approach towards selective VOC sensing
Illustrations show a band diagram of NiO/ZnO heterojunction sensor device showing broken type (type III) heterojunction formation. Absence of potential well reduced trapped states thereby increasing the effectiveness of the sensor. b Experimental plot of diode current vs. voltage in dry nitrogen (black line) and in dry air (red line), inset is zoomed in view of diode current in dry air
