Fig. 7: Device performance analysis in support of VOC sensing mechanism. | Microsystems & Nanoengineering

Fig. 7: Device performance analysis in support of VOC sensing mechanism.

From: Voltage-controlled NiO/ZnO p–n heterojunction diode: a new approach towards selective VOC sensing

Fig. 7: Device performance analysis in support of VOC sensing mechanism.

The plots represent a T-CAD simulation of diode structure, current vs. surface carrier concentration for three different voltages. A definite variation of surface carrier concentration with increasing forward bias voltage was observed supporting the proposed sensing mechanism. b Experimental diode current at three voltages in dry nitrogen and dry air

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