Fig. 6: HR-SEM images of support cantilevers after dry etching of Si from the frontside of the wafer.

a Side-view HR-SEM image (scale bar: 500 µm). Note that the slight damage visible on the top surface of the device base was caused by handling during the SEM inspection. b Cross-sectional HR-SEM image (scale bar: 20 µm) of a freestanding PR line with a Pt nanowire.