Fig. 4: Performance of massively parallel direct writing system. | Microsystems & Nanoengineering

Fig. 4: Performance of massively parallel direct writing system.

From: Massively parallel direct writing of nanoapertures using multi-optical probes and super-resolution near-fields

Fig. 4

a Results of a large-area (200 × 200-mm) nanoaperture. b Photo and scanning electron microscopy images of a photoresist nanopattern fabricated on an 8-inch wafer via near-field nanolithography based on the large-area nanoaperture. Pattern-uniformity results: high-resolution scanning electron microscopy image of 12 parts of the total pattern area. Six points were measured in each part (Table S2). c Graph of pattern-uniformity results. The mean line width of the nanopatterns was 206.04 nm, the standard deviation was 5.06 nm and the uniformity (2σ) was 5.22% d Optical microscopy and atomic force microscopy images: the eagle symbol of Yonsei University with 210-nm line patterns and the Mona Lisa with 250-nm dot patterns.

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