Table 2 Parameters used in Eq. (32)

From: Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers

 

Lc(nm)

γ

fc(MHz)

Z devices

350

4.4 × 10−11

≈ 1.6

Z devices*

350

6.8 × 10−11

≈ 2.3

Z devices

500

8.3 × 10−11

≈ 2.0

Z devices

1000

26 × 10−11

≈ 2.0

XY devices**

900

35 × 10−11

≈ 3.0

  1. *Sensing electrode is hollow between layers and air can flow through. **Double vertical gap of 900 nm, one of them with holes and air can flow through
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