Table 4 Interference/offset reduction achieved with Lorentz routing symmetric design (*) and Lorentz current shielding (**)
From: Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
Device | Measurement | Device | Admittance | Vdrop | Vw (RMS) | \({V}_{sh}^{int}\) (RMS) | Magnetic |
|---|---|---|---|---|---|---|---|
type | conditions | impedances | offset | (iLRwire) | Eq. (38) | Eq. (37) | offset |
Z L = 600 μm g = 0.5 μm Q = 770 nw = 2, nB = 10 | \({i}_{L}=51.1{{{\rm{\mu }}}}{{{{\rm{A}}}}}^{peak}\\=\text{square wave}\\{V}_{1-2}^{dc}=0.5{{{\rm{V}}}}\\{V}_{1-2}^{ac}=10{{{{\rm{mV}}}}}^{RMS}\) | Cws = 6.20 pF Css = 1.36 pF | \(\begin{array}{*{20}{l}} {G}_{off}^{Z}=0.459 \, {\upmu}{\rm{S}} \end{array}\) | 295 mV → | 3.08 mV → | 0.428 μV | 0.43 μT |
Zsh = 25Ω Rwire = 4.50 kΩ | \(\begin{array}{*{20}{l}}{B}_{off}^{Z}=3.39 \, {\upmu}{\rm{S}}\end{array}\) | \({\left(\frac{1}{45}\right)}^{* }\) | \({\left(\frac{1}{7184}\right)}^{* * }\) | ||||
XY L = 600 μm g = 0.9 μm Q = 1575 nw = 4, nB = 6 | \({i}_{L}=52.5{{{\rm{\mu }}}}{{{{\rm{A}}}}}^{peak}\\={{{\rm{square}}}}\,{{{\rm{wave}}}}\\{V}_{1-2}^{dc}=1{{{\rm{V}}}}\\{V}_{1-2}^{ac}=10\,{{{{\rm{mV}}}}}^{RMS}\) | Cws = 3.56 pF Css = 2.9 pF | \(\begin{array}{*{20}{l}} {G}_{off}^{Z}=0.321\,{\upmu}{\rm{S}} \end{array}\) | 282 mV → | 5.17 mV → | 0.362 μV | 0.13 μT |
Zsh = 25Ω Rwire = 4.22 kΩ | \(\begin{array}{*{20}{l}}{B}_{off}^{Z}=2.88\,{\upmu }{\rm{S}}\end{array}\) | \({\left(\frac{1}{26}\right)}^{* }\) | \({\left(\frac{1}{14301}\right)}^{* * }\) |
