Fig. 8 | Microsystems & Nanoengineering

Fig. 8

From: Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Fig. 8The alternative text for this image may have been generated using AI.

The complete process flow for chip fabrication. a Wafer cleaning using standard RCA procedures. b Lithographic patterning of sensitive diaphragm patterns. c Electroplating of masked Ni layer. d Deep dry etching of sensitive diaphragm back cavity. e Lithographic patterning of sensitive piezoresistors patterns. f Dry etching of sensitive piezoresistors. g PECVD of the SiO2 layer. h Lithographic patterning of ohmic contact areas. i Opening ohmic contact window. j Sputtering Ni metal layer and lift off. k Rapid thermal annealing. l Forming the metal lead layer

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