Table 1 Silicon photonic MEMS device performance in comparison with state-of-the art free carrier dispersion (FCD), thermo-optic (TO), plasmonic-organic hybrid (POH), lithium niobate (LiNbO3) and liquid crystal (LC) devices, where silicon photonic MEMS uniquely provide a compact footprint, low insertion loss, low power consumption and broad optical bandwidth
Property/performance | ||||||
|---|---|---|---|---|---|---|
Photonic device | Footprint (incl. cont.) [μm × μm] | Insertion loss [dB] | Drive voltage [V] | Power cons. [nW] | Optical bandwidth [nm] | Response time [μs] |
MEMS tunable coupler | 78 × 78 | 0.5 | 27 | –a | 30 | –a |
MEMS switch | 65 × 62 | –a | 23 | –a | 1500–1600 | <1 |
MEMS ring resonator | 75 × 45 | –a | 27 | –a | 0.26 | –a |
MEMS phase shifter | 100 × 45 | 0.33 | 20 | <1b | 50f | 2c |
TO phase shifter36 | 109 × 21 | 1.23 | 0.8 | 2560 | 1520–1600 | <34.8 |
FCD MZI phase shifter68 | 2100 × 2000 | 6.9 | 0.5 | 203·103 | Broadband | <0.001 |
POH phase shifter39 | 29 × 10 | 12 | 3 | 2.4·106d | Broadband | <0.001 |
LiNbO3 phase shifter69 | 20,000 × 500 | 0.5 | 0.37 | 26·103e | Broadband | <0.001 |
LC phase shifter70 | 80 × 40 | 0.83 | 10 | – | Broadband | 1000 |