Table 1 Performance comparison of BGRs

From: A 0.82 μVrms ultralow 1/f noise bandgap reference for a MEMS gyroscope

 

This work

12 JSSC 2021

13 TCAS-I 2019

21 JSSC 2019

22 JSSC 2018

23 TED 2015

9 JSSC 2011

Process

180nm CMOS process

180 nm CMOS process

350 nm CMOS process

180 nm CMOS process

350 nm CMOS process

180 nm CMOS process

160 nm CMOS process

Area (mm2)

0.23

0.38

0.0616

0.0045

0.23

0.05

0.12

Supply voltage (V)

2.8-5

2–3.3

2.6–5

1.0

3.3

1.3–2.6

1.8

Output voltage (V)

1.3315

1.1419

2.47

0.6926

1.22

1.1402

1.0875

Line sensitivity (%/V)

0.004

NA

0.0041

0.02

NA

0.03

NA

PSRR (dB@Hz)

-90.97 dB

@0.5 Hz,

-70.52 dB

@10 kHz

−76 dB

@DC

−83 dB

@DC

−55 dB

@100 Hz

NA

−54 dB

@100 Hz

−74 dB

@DC

Current consumption (mA)

0.1787

0.017

0.094

NA

(192 pW)

0.115

0.0043

0.055

Best temperature Coefficient (ppm/°C)

14.61 (-40–125°C)

4.3 (-40–150 °C)

0.9 (-45–125 °C)

33 (average) (-20–100 °C)

NA

4.1 (−55–125 °C)

5 (−40–125 °C)

Trimming

No

No

Yes

No

Yes

Yes

Yes

0.1–10 Hz Integrated Noise (V)

0.82μ

56 μ

3.6 μ

26.8 μ

7.84 μ

10.23 μ

6.1 μ

Output Current (mA)

12.94

NA

0.03

NA

NA

20

NA