Fig. 23: SEM images of line arrays etched into silicon.
From: Electron beam lithography on nonplanar and irregular surfaces
The electron energy and dose are a energy of 3 keV, area dose of 3000 μC/cm2, width of 100 nm, pitch of 200 nm; b energy of 20 keV, area dose of 33,000 μC/cm2, width of 100 nm, pitch of 200 nm (the inset figure shows the same pattern at a relatively low magnification); c energy of 3 keV, line dose of 20 nC/cm, pitch of 100 nm; and d energy of 20 keV, line dose of 120 nC/cm, pitch of 60 nm26. Reproduced with permission from ACS Publications (2017)
