Fig. 28: SEM images of the pattern obtained by using a PS brush as a positive resist.
From: Electron beam lithography on nonplanar and irregular surfaces
a 300-nm period, 0.2-nC/cm exposure dose; b 1-μm period, 0.2-nC/cm exposure dose; c 500-nm period, 3.8-nC/cm exposure dose; and d AFM image of the line array presented in c69. Reproduced with permission from ACS Publications (2017)
