Fig. 36: The depth of exposed areas is reported as a function of the exposure dose.
From: Electron beam lithography on nonplanar and irregular surfaces
a an initial layer 45 nm in thickness was used; after completing the half-time BHF etching process (in this case, 29 s), a 22-nm-thick layer of SiO2 remained in unexposed areas. b an initial layer with a thickness of 70 nm was used. The dose required for complete exposure was quite similar in the two cases28. Reproduced with permission from ACS Publications (2012)
