Fig. 3: Gate-tunable characteristics for a monolayer MoS2 circular drumhead resonator (Device S2) with flat suspended material and without observable surface nonidealities. | Microsystems & Nanoengineering

Fig. 3: Gate-tunable characteristics for a monolayer MoS2 circular drumhead resonator (Device S2) with flat suspended material and without observable surface nonidealities.

From: Unveiling the tradeoff between device scale and surface nonidealities for an optimized quality factor at room temperature in 2D MoS2 nanomechanical resonators

Fig. 3

a Optical image of the device with a diameter of 1 μm. b, c False-colored SEM images showing the flat suspended membrane. Measured (d) photoluminescence spectrum with high intensity and (e) Raman spectrum with a difference between the E12g and A1g peaks of 19.86 cm−1, corresponding to monolayer MoS2. f Frequency tuning characteristics measured at a fixed vRF of 10 mV, with the amplitude shown in color scale. g Linear to nonlinear resonances obtained by increasing the vRF at a fixed VGS of 1 V. Extracted Q factors and modeled dependence on (j) VGS and (k) vRF, showing typical resonances at (h) VGS = 1 V with a Q factor of 1061 ± 107 and (i) vRF = 100 mV with a Q factor of 817 ± 21. From the gate-tunable Q factor, the loss angle δ of 0.008 is extracted from fitting via the strain-modulated dissipation model

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