Fig. 1: Neuromorphic Behavior of Iontronic Fluidic Memristor.
From: Brain inspired iontronic fluidic memristive and memcapacitive device for self-powered electronics
a Illustrating the synaptic response between the presynaptic and postsynaptic neurons compared to the ionic memristor interface with future technology. b The primary mechanism schematic manipulates ion and liquid transport in the ionic liquid discrete channel. c The device voltage sweeps at different voltages. d The device voltage sweep of ±4.5 V for 100 endurance cycles. e The step response from 3.3 to 4.5 V with a voltage step of 0.1 V. f The current and voltage response with time domain for continuous positive and negative voltage cycles. The multi-state switching behaviour at dual voltage sweep of g 0 V to 4.5 V to 0 V and h 0 V to −4.5 V to 0 V. i The capacitance response of the device at a bias voltage of 3 V in a frequency range of 3–10 kHz. j Capacitive voltage sweep at ±4.5 V of ionic device in a frequency range of 3–10 kHz
