Fig. 6: Experimental platform, static and temperature performance of the 4H-SiC pressure sensors. | Microsystems & Nanoengineering

Fig. 6: Experimental platform, static and temperature performance of the 4H-SiC pressure sensors.

From: Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments

Fig. 6: Experimental platform, static and temperature performance of the 4H-SiC pressure sensors.The alternative text for this image may have been generated using AI.

a Setup of the 4H-SiC pressure sensor performance testing platform. b The high-temperature pressure performance testing of SiC pressure sensor. c Static air pressure calibration results of SiC pressure sensors family of schemes A–H. d Temperature drift of SiC pressure sensors’ zero outputs in –50 to 600 °C. Error bars are scaled 5 times larger. e Temperature coefficients of zero output of SiC pressure sensors. (f) Working lines for pressure calibration of SiC pressure sensors in –50 to 400 °C. g Temperature drift of sensitivities and temperature coefficients of sensitivities of SiC pressure sensors. h The comparison of the normalized index for the operating temperature range, sensitivity, pressure range and accuracy of the SiC pressure sensors

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