Fig. 3: High-resolution patterns of DA-AgNWs.
From: Patterning silver nanowire network via the Gibbs–Thomson effect
a–j OM images of the patterned DA-AgNW networks with different graphic designs. The side length of the squares in (g) is 50 μm. h The pattern with a fixed linewidth of 50 μm and spacings gradually reduced from 100 to 10 μm. The linewidths of (i, j) are 50 μm and 30 μm, respectively. k–l SEM images of the AgNW patterns with linewidths of 20 μm and 10 μm, respectively
