Fig. 3: Volatile 3-T NEM switch characterization. | Microsystems & Nanoengineering

Fig. 3: Volatile 3-T NEM switch characterization.

From: Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process

Fig. 3: Volatile 3-T NEM switch characterization.

a SEM image of a partially released 3-T NEM switch with Au contact metallization (at step Fig. 5(v)). The inset shows the thin hinge areas that have already been suspended in the partial release step. b Measured current versus voltage characteristics of two different 3-T NEM switches, one with 80 nm-thick Au metallization contacts (blue) and one with blank Si contacts without applied contact metallization (red). The gate voltage ramping step size is 0.1 V

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