Table 1 Representative CMOS-compatible NEM-switch architectures
Device | Function mode | Structure (no. of electrodes) | Primary materials | Fabrication methods | Ron (kOhm) | Cycles (~environment) | Failure modes | Gate gap (nm) | Drain gap (nm) | Release | Sacrificial layer | Operation voltage (V) | Year | Ref. | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1 |
| Volatile | Out-of-plane cantilever single-contact (3) | TiN | CMOS-compatible, not integrated | / | 10 (air) 50 (oil) | Increased contact resistance | 40 | 20 | BHF (with CPDa) | SiO2 | 12 (air) 8 (oil) | 2009 | |
2 |
| Volatile | Out-of-plane serpentine four-contact (4) | Poly-Si0.4Ge0.6 + W + TiO2 | CMOS-compatible, not integrated | <100 | 109 | / | 200 | 100 | HF vapor | SiO2 | 6 | 2009 | |
3 |
| Volatile | In-plane cantilever single-contact (3) | Mono-Si + a-C | CMOS-compatible, not integrated | <50k | 108 | / | 60 | 60 | BHF (with CPDa) | SiO2 | 13–15 | 2014 | |
4 |
| Non-volatile | In-plane bi-stable cantilever (5) | TiN + Cu | Monolithically integrated | <100 | 3 | Stiction | / | 32 | SF6-O2 plasma | Doped silicon glass | 10 | 2021 | |
5 |
| Volatile | In-plane cantilever single-contact (4) | Mono-Si + Au | Monolithically integrated | / | 20 | Stiction | 300 | 200 | HF vapor | SiO2 | 16 | 2023 | |
6 |
| Non-volatile | In-plane bi-stable cantilever two-contact (5) | TiN + Al | Monolithically integrated | 1k | / | / | 280 | 280 | 96% H2SO4 + 48% HF | SiO2 | 3.4 | 2023 | |
7 |
| Volatile | In-plane cantilever single-contact (3) | Mono-Si + Au | Monolithically integrated | / | 1 | Stiction | 300 | 200 | HF vapor | SiO2 | 5.6 | 2025 | This work |
Volatile | In-plane bi-stable cantilever two-contact (7) | <80k | 43 | 300 | 200 | 16 | |||||||||
Non-volatile | / | 2 | 20 | ||||||||||||
