Table 2 Summary of measured actuation behavior of NEM switches in dependence of contact metallization

From: Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process

 

Behavior

Number of evaluated devices

Au on top [nm]

Sidewall coveragea [nm]

Vpi [V]

Vpo [V]

ccw

cw

ccw

cw

3-T switches

Volatile

1

80

\(\approx\) 30

5.6

1.9

Stiction

1

0

0

5.7

–b

7-T switches

Volatile

2

80

\(\approx\) 30

16.9

15.9

15.8

14.8

Non-volatile

1

40

\(\approx\) 15

20.5

22.9

–c

–c

Stiction

2

0

0

36.6

37.0

–b

–b

  1. aEstimated based on reduction of the contact and actuation gaps observed by SEM. We assume that the coating is uniform on the sidewalls
  2. bContact stiction immediately after the 1st actuation
  3. cNon-volatile switches feature no pull-out voltage
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