Table 3 Parameters of Deep Silicon Etch
From: Design method for out-of-plane motion rejecting structure in 2-DoF large stroke actuators
Parameter name | Value |
|---|---|
Source Power | 3500 W |
Bias Power | 1000 W |
SF6 Flow | 1000 sccm |
C4F8 Flow | 500 sccm |
Temperature | −10 °C |
Depo Time | 2.6 s |
Etch Time | 3.0 s |
Loop Destination | 200 |
