Fig. 6: Comparison of graphene patterns fabricated by OFP and general etching methods. | Microsystems & Nanoengineering

Fig. 6: Comparison of graphene patterns fabricated by OFP and general etching methods.

From: Direct and residue-free patterning of sub-5 µm CVD monolayer graphene with highly enhanced conductivity and pattern fidelity

Fig. 6

Top view and cross-sectional SEM images of the graphene patterns with 5 μm and 20 μm width fabricated by a suggested OFP method and b general etching method. The red dashed inset shows a magnified view of the graphene channel structure. Optical microscopy images (b-2, b-3) show the top-view of the channel and pattern configuration with polymer residues. c Raman mapping results of general etching method for Si-, G-, and 2D-peaks over the graphene channel area (225 μm × 225 μm, scale bar: 50 μm). d I–V characteristics and e histogram of resistance distribution of OFP-G channels, respectively. f I-V curves for graphene channels fabricated using the general etching method, showing negligible conduction and insets display magnified current scales to highlight minimal variation

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