Table 1 Layer properties used in the ECM calculation

From: High frame rate ultrasonic flowmeter based on PMUT array with bidirectional acoustic beams

Symbol

Value

Description

Symbol

Value

Description

r

250 μm

Diaphragm radius

YPt

168 Gpa

Young’s modulus of Pt

Rte

162 μm

Top electrode radius

\(\rho\)Pt

21,450 kg/m3

Density of Pt

d

625 μm

Pitch between adjacent cells

νPt

0.38

Poisson’s ratio of Pt

tSi

4 μm

Polysilicon thickness

YPZT

70 Gpa

Young’s modulus of PZT

\({t}_{{{SiO}}_{2}}\)

0.5 μm

SiO2 thickness

\(\rho\)PZT

7600 kg/m3

Density of PZT

tBE

0.12 μm

Bottom Pt thickness

νPZT

0.33

Poisson’s ratio of PZT

tPZT

2 μm

Piezoelectric layer thickness

\({Y}_{{{Al}}_{2}{O}_{3}}\)

400 Gpa

Young’s modulus of Al2O3

tTE

0.1 μm

Top Pt thickness

\({\rho }_{{{Al}}_{2}{O}_{3}}\)

3965 kg/m3

Density of Al2O3

\({t}_{{{Al}}_{2}{O}_{3}}\)

0.04 μm

Al2O3 passivation thickness

\({\nu }_{{{Al}}_{2}{O}_{3}}\)

0.22

Poisson’s ratio of Al2O3

tUSG

0.4 μm

USG passivation thickness

YUSG

72 Gpa

Young’s modulus of USG

\({t}_{{{Si}}_{3}{N}_{4}}\)

0.3 μm

Si3N4 passivation thickness

\(\rho\)USG

2200 kg/m3

Density of USG

YSi

160 Gpa

Young’s modulus of Si

νUSG

0.17

Poisson’s ratio of USG

\(\rho\)Si

2320 kg/m3

Density of Si

\({Y}_{{{Si}}_{3}{N}_{4}}\)

250 Gpa

Young’s modulus of Si3N4

νSi

0.22

Poisson’s ratio of Si

\({\rho }_{{{Si}}_{3}{N}_{4}}\)

3100 kg/m3

Density of Si3N4

\({Y}_{{{SiO}}_{2}}\)

70 Gpa

Young’s modulus of SiO2

\({\nu }_{{{Si}}_{3}{N}_{4}}\)

0.23

Poisson’s ratio of Si3N4

\({\rho }_{{{SiO}}_{2}}\)

2200 kg/m3

Density of SiO2

d31

–150 pm/V

Piezoelectric coefficient

\({\nu }_{{{SiO}}_{2}}\)

0.17

Poisson’s ratio of SiO2

\(\varepsilon\)r

1200

Relative dielectric constant