Fig. 13: The influence of MOS heterojunction design on H2 sensor selectivity. | Microsystems & Nanoengineering

Fig. 13: The influence of MOS heterojunction design on H2 sensor selectivity.

From: A comprehensive review of hydrogen sensor for thermal runaway monitoring: fundamentals, recent advancements, and challenges

Fig. 13: The influence of MOS heterojunction design on H2 sensor selectivity.

a Differential charge density of NiO/TiO2 and TiO2/NiO heterojunctions after absorption of O2-H2 and O2-CO; b Gas selectivity mechanism of the NiO-TiO2 heterojunction in the presence of Air, H2, and CO; c cycle response curves of NiO/TiO2 to 400 ppm of CO, H2, and the mixture of H2 and CO207. Copyright 2023, American Chemical Society. f TEM images of SnO2-Co3O4 nanocomposite; g, h Gas selectivity of four samples to different gases at 325 °C201. Copyright 2025, Elsevier. I TEM images of SnO2, CeO2, and SnO2-CeO2; j Response curves of the CeO2, SnO2, CeO2-SnO2 exposed to different concentrations of H2 at 300 °C; b dynamic response curves of CeO2-SnO2 sensor to various H2 concentrations at different temperatures212. Copyright 2018, Elsevier. l SEM and AFM images of AgInO2 thin film; m Selectivity of AgInO2 thin film towards 100 ppm of various gases at 360 °C; n Calibration plot of AgInO2 thin film towards different concentrations of H2 at 360 °C213. Copyright 2023, Elsevier

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