Fig. 22: Construction of heterojunctions to improve stability in 2D material based H2 sensors. | Microsystems & Nanoengineering

Fig. 22: Construction of heterojunctions to improve stability in 2D material based H2 sensors.

From: A comprehensive review of hydrogen sensor for thermal runaway monitoring: fundamentals, recent advancements, and challenges

Fig. 22: Construction of heterojunctions to improve stability in 2D material based H2 sensors.

a TEM image of 2D MoS2-decorated MoO3; b The relationships among the sensor response, the BET specific surface area and the content of the adsorptive oxygen; c Sensing response towards 5–1800 ppm H2401. Copyright 2022, Elsevier. d SEM images of SnO2, SnS2/SnO2 and Pd/SnS2/SnO2; e Response curves of Pd/SnS2/SnO2 towards 100–10,000 ppm H2; f Long-term stability of 1.0 at% Pd/SnS2/SnO2 to 5000 ppm H2 at 300 °C361. Copyright 2022, Elsevier. g HRTEM images and related SAED patterns of the 48 h and 170 h annealed SnSe2 flakes in air at 200 °C; h Dynamic electrical responses of SnO2/SnSe2 at 100 °C to H2 (5–100 ppm); i Baseline resistances change of SnO2/SnSe2 with different annealing times by modulating the working temperature in 25–150–25 °C range; j Long-term stability of SnO2/SnSe2 sample to100 ppm H2 over one year408. Copyright 2022, Elsevier. k Dynamic electrical responses of In2O3/In2Se3 at 100 °C to H2 (5–100 ppm); l Baseline resistance variations of In2O3/In2Se3 by modulating the working temperature in 25–150–25 °C range over different time periods409. Copyright 2023, American Chemical Society

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