Fig. 3: Response time and OT manipulation performance of different nanowires in electric fields. | Microsystems & Nanoengineering

Fig. 3: Response time and OT manipulation performance of different nanowires in electric fields.

From: Nano calligraphy via optical electro-aligning manipulation

Fig. 3: Response time and OT manipulation performance of different nanowires in electric fields.The alternative text for this image may have been generated using AI.

ad Upper: SEM images of individual Silver, TiO2, GaAs and InAs nanowires used in the experiment, respectively. Scale bar: 5 µm. Bottom: Response time of four types of nanowires with different length-to-width ratios under sine wave electric fields at varying frequencies. eg Comparison of the OT capture success rate, minimum capture power and maximum manipulation speed of the four nanowires, when the electric field turned on and off. The error bars represent the Standard Deviation of the measurements. For each data point presented in Fig. 3e–g, the experiments were repeated 10 times (N = 10) to ensure statistical reliability

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