Fig. 2: Characterization of Micro-LEDs integrated by the SITRAB method.
From: Heterogeneous integration of micro-LEDs via multiple simultaneous transfer and bonding
a Cross-sectional SEM image of the InGaN green Micro-LED integrated with the display backplane via the SITRAB process. b Cross-sectional SEM image and EDS mapping images of the solder joint between the InGaN green Micro-LED and the display backplane after the SITRAB. c I-V characteristic of the InGaN green Micro-LED on mother substrates and on a backplane, respectively. d L-I-V characteristic of the InGaN green Micro-LED after the SITRAB. e Electroluminescence spectra of the AlGaInP red, InGaN green, and InGaN blue Micro-LEDs, all of which were transferred onto the display backplanes using the SITRAB method. The injection current was 1 mA for each Micro-LED operation. The inset shows the AlGaInP red, InGaN green, and InGaN blue Micro-LEDs emitting red, green, and blue light, respectively. f CIE color coordinates of the AlGaInP red, InGaN green, and InGaN blue Micro-LEDs after the SITRAB, plotted with NTSC (blue line) and BT2020 (black line) color gamuts
