Fig. 4: Dielectric properties.
From: Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect
a Thickness-dependent C–V characteristics of the PZT films. b Inverse zero-voltage capacitance as a function of thickness. c 1/C2–V relationships of a 120-nm film in the voltage regions of −2.7 V → 0 V and +3.3 V → +1 V, where the capacitance is least influenced by the polarization switching
