Fig. 2
From: Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
Atomic and electronic structure of domain walls and edges. a, b Constant current STM images (Vs = −0.5 V, It = 500 pA, and L2 = 9.7 × 6.4 nm2) of the second and the fourth domain wall, superimposed with the schematic David-star superlattice. The indices for each domains are indicated in Fig. 1a. The black arrows represent the phase shift between neighboring domains. The center and edges of domain walls are marked by green and yellow (blue) triangles, respectively. Scale bar, 1 nm. c, f The STM images (Vs = −1.2 V, It = 100 pA) are simultaneously acquired with the STS measurements. d, g Spatially resolved dI/dV spectra cross the domain walls. Each spectrum is averaged in the region marked by same colored lines in the STM images c, f. The evolution of the incoherent peaks in the domain is displayed by the semitransparent blue and red curves. The double-headed black arrows display the gap size of domains. The single-headed black arrows indicate the subband splitting. The in-gaps states are highlighted by the filled gaussian-shaped peaks. e, h High-resolution STS spectra at the domain wall and edges. The double-headed black and red arrows indicate the zero conductance region and the peak-to-peak splitting at the domain edges, respectively. Spectra are equally shifted in intensity for clarity
