Fig. 4 | Nature Communications

Fig. 4

From: Interlayer excitons in a bulk van der Waals semiconductor

Fig. 4

Transition selection rules for intra- and interlayer excitons. Helicity-resolved optical selection rules for the transitions at B = 0 (left) and B > 0 (right) between the valence band VB and the spin–orbit–split conduction bands CB1 and CB2 (with carrier spins marked) in the case of a monolayer and b bulk (and bilayer) 2H-MoTe2. The dashed lines in the right panels indicate the band positions for B = 0. Vertical and diagonal arrows indicate intralayer (\({\rm X}_{\rm{A}}^0\)) and interlayer transitions (X IL). c Theoretically expected trends of the excitonic transition energies and the Zeeman splittings for the intralayer (\({\rm X}_{\rm{A}}^0\)) and interlayer (X IL) excitons

Back to article page