Fig. 3 | Nature Communications

Fig. 3

From: Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Fig. 3

Transport characteristics of 9AGNRs and 13AGNRs gated with 50 nm SiO2 gate oxide. The presence of a SB is confirmed by non-linear current behavior at low drain bias and lack of current saturation at high drain bias for both a 9AGNRs and b 13AGNRs. The weak temperature dependence in the I d −V g behavior in c 9AGNRs and d 13AGNRs indicates that tunneling through the Pd-GNR SBs is the limiting transport mechanism of the device

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