Fig. 5
From: Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
Transport characteristics of a scaled, high-performance 9AGNRFET at room temperature. a I d −V d characteristics of the scaled 9AGNRFET. b I d −V g of the devices show high I on > 1 μA for a 0.95 nm wide 9AGNR and high I on /I off ~ 105. Inset: scaled 9AGNRFET schematic
