Fig. 1
Hybrid phototransistors of quantum dots buried in amorphous-oxide semiconductors. a Schematics of proposed device structure. The channel contains OQO layers, with QDs buried between the top and bottom oxide (SIZO) layers, as shown in the cross-sectional TEM image. Scale bar is 100 nm. The top and bottom SIZO layer thicknesses are 30 and 40 nm, respectively. The 1–6 QD layers have 5.5–30-nm thicknesses. The photocarriers generated by the QDs via light absorption are transported through the oxide layers. b Spatial photocurrent profile for 487-nm laser beam with 10-nW power. Scale bar is 100 nm. The photocurrent was measured during laser beam scanning across the photodetector surface. c, d Photocurrent response and R of (c) SIZO-only device and (d) monolayered-red-QD (1RQ) OQO device, at 487-nm illumination wavelength with 10-nW power. V SD is 5 V. Black and red lines are dark current and photocurrent, respectively. Responsivities are indicated by blue lines
