Fig. 1
From: Planar Hall effect from the surface of topological insulators
Dual-gating of BST films. a Temperature dependence of R xx in a 17-nm-thick device at zero gate voltages (V TG = V BG = 0). b Schematics of the dual-gate Hall-bar device and the measurement configuration. c, d Gate–voltage dependencies of R xx in 0 T at 2 K. e, f Gate–voltage dependencies of R yx in the perpendicular magnetic field of 9 T at 2 K
