Fig. 1

Schematics for spin Nernst effect and spin Nernst magnetoresistance. a Spin Nernst effect (SNE), where the temperature gradient in x-direction generates a spin current in z-direction with the spin orientation in y-direction. b Spin Nernst magnetoresistance (SNMR) in FM/HM bilayer where a spin current induced in HM by a temperature gradient in x-direction (J s,T ) partially reflected at the FM/HM interface depending on its spin orientation with respect to the magnetization direction of the FM layer, resulting in the modification of the longitudinal (ΔV xx ) and transverse (ΔV xy ) thermoelectric voltages of the bilayer. \(J_s^{{\rm{abs}}}\)(\(J_s^{{\rm{ref}}}\)) is the absorbed (reflected) spin current at the FM/HM interface