Fig. 4
From: Surface plasmon induced direct detection of long wavelength photons
Characterization of the antenna-assisted subwavelength Au–InSb–Au devices. a Room temperature current–voltage (I–V) characteristics of the device with s = 90 µm. The red line is the linear fit to the experimental data. b Photovoltage of the same device under 25 mW illumination of a 0.151 meV source at a modulation frequency of 300 Hz, as a function of DC bias current. The inset is a typical photoresponse waveform recorded by an oscilloscope. c Photovoltage of the same device as a function of source output power at 300 Hz under a DC bias of 3.5 mA. The red line is the linear fit. d Polarization dependence of the photovoltage of the device measured under a DC bias of 3.5 mA and at the source output power of 25 mW. The vertical and horizontal axes are designated as x and y, respectively. e Photovoltages of devices with different values of spacing, measured in the same conditions as for the device with a spacing of 90 µm. f Photovoltages of the device for incident waves with photon energies from 0.130 to 0.165 meV under a DC bias of 3.5 mA. The red line is a smoothed version of the data for easier viewing. g Photovoltages of the device designed for detecting 1.37 meV (0.332 THz) photons for incident photons from 1.36 to 1.43 meV under a DC bias of 3.5 mA. The red line is a smoothed version of the data
