Fig. 2
From: Stateful characterization of resistive switching TiO2 with electron beam induced currents
Depiction of device beam interaction. Monte Carlo-simulated absorption in a multi-layer ReRAM device at both 1.5 keV incident beam and 10 keV incident beam. Absorption in different layers can result in the different depicted currents including the secondary electron current (\({I}_{{\rm{SEE}}}\)), the electron beam absorbed current (\({{I}}_{{\rm{EBAC}}}\)), the electron–hole pair current (\({I}_{{\rm{e}} \leftrightarrow {\rm{h}}}\)), and the internal secondary electron currents from top to bottom \(({I}_{{\rm{ISEE}}}^{{\rm{T}} \to {\rm{B}}})\) and bottom to top \(({I}_{{\rm{ISEE}}}^{{\rm{B}} \to {\rm{T}}})\). These all sum to create the measured electron beam-induced current \(({I}_{{\rm{EBIC}}})\). Energy absorption scale bar indicates high intensity (white), intermediate intensity (orange), and zero intensity (transparent revealing diagram coloring of corresponding device layers)
