Fig. 2
From: Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films
Electric-field control of anomalous Hall effect. Magnetic-field (B) dependence of anomalous and topological Hall resistivities (ρAHE + ρTHE, solid lines) at 30 K under gate voltage VG = −180 V (a), 0 V (b), and 200 V (c) for SRO5/SIO2/Sub. Magneto-optic Kerr rotation as a function of B under the same gate bias is also shown by broken lines in each panel. Yellow colored regions correspond to ρTHE. Black arrows indicate the sweep direction of B. d Temperature (T) dependence of ρAHE under VG = −180 V (blue), 0 V (gray) and 200 V (red). The black box corresponds to the data in a–c. e B dependence of ρAHE + ρTHE at 30 K under VG = −180 V (blue), 0 V (gray), and 200 V (red) for SRO5/SIO5/Sub. f T dependence of variation in anomalous Hall resistivity (ΔρAHE) between VG = 200 V and VG = −180 V for SRO5/SIO5/Sub (yellow) and SRO5/SIO2/Sub (green). Error bars include the uncertainty of the sample thickness and of electrical measurement
