Fig. 3
From: Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films
Electric-field control of topological Hall effect. a Topological Hall resistivity (ρTHE) at 30 K as a function of external magnetic field (B) under VG = −180 V (blue line), 0 V (gray line) and 200 V (red line) for SRO5/SIO2/Sub. Black arrows indicate the sweep direction of B. b Temperature (T) dependence of ρTHE under gate bias. Color map of ρTHE in the T-B plane under VG = −180 V (c), 0 V (d) and 200 V (e)
