Fig. 2 | Nature Communications

Fig. 2

From: High-resolution patterning of solution-processable materials via externally engineered pinning of capillary bridges

Fig. 2

Scanning electron microscopy images of patterned structures. a Line pattern of 2008P, a polymeric semiconductor. b Grid structure composed of sequentially patterned PVP and polystyrene lines. c Fabricated PS lines with about 300 nm resolution and 150 nm feature. d Self-assembled secondary pattern (resolution around 50 nm) on a primary PS line. e, f SEM images of cross sections of patterned PS lines with different feature sizes and schematic drawing to illustrate of how the sample was cleaved and imaged

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