Fig. 2

Scanning electron microscopy images of patterned structures. a Line pattern of 2008P, a polymeric semiconductor. b Grid structure composed of sequentially patterned PVP and polystyrene lines. c Fabricated PS lines with about 300 nm resolution and 150 nm feature. d Self-assembled secondary pattern (resolution around 50 nm) on a primary PS line. e, f SEM images of cross sections of patterned PS lines with different feature sizes and schematic drawing to illustrate of how the sample was cleaved and imaged