Fig. 4

Evaluation of the patterned wires. GI-WAXD results for a spun-cast P(NDI2OD-T2) film (a–c) and patterned P(NDI2OD-T2) wires (d–f). b, c The in-plane and out-of-plane data of the spun-cast sample, respectively, while e and f are the in-plane and out-of-plane data of patterned wires taken in the wire direction. Both devices were annealed at 140 °C for 30 min. Angle dependence of the brightness of patterned P(NDI2OD-T2) lines (g) measured under polarized microscope for samples created using our patterning method (solid circles) and by plasma etching a spin-coated P(NDI2OD-T2) film with PVP lines as a mask (solid diamonds). h, i Birefringence images of wires with different orientations around 45° and 180°, respectively