Table 1 Photophysical and electrochemical data for the Ir dopant and H host materials

	λ_em (nm)^a	τ _obs (μs)^b	PLQY^c	E _ox (V vs SCE)^d	E _red (V vs SCE)^e	E* _ox (V vs SCE)^f	E* _red (V vs SCE)^g
Ir1	467	2.7	0.13	0.81 (r)	-^h	−1.85	NDⁱ
Ir2	467	2.0	0.25	0.82 (r)	-^h	−1.84	NDⁱ
Ir3	460	3.8	0.28	1.12 (r)	-^h	−1.59	NDⁱ
Ir4	474	2.3	0.50	1.10 (r)	-^h	−1.63	NDⁱ
H	400	0.0075	NDⁱ	1.50 (ir)	−1.82 (ir)	−1.60	1.28

r reversible, ir irreversible
^a 10 μM in deaerated THF, 298 K
^b Photoluminescence lifetimes determined employing time-correlated single-photon-counting techniques, after picosecond pulsed laser excitation at 377 nm. The measurements were taken for deaerated THF solutions containing 50 μM Ir dopant or 50 μM H host
^c Photoluminescence quantum yields of the Ir dopants measured for mCBP films (50 nm) molecularly dispersed with 5 wt % Ir
^d Oxidation potentials
^e Reduction potentials. Cyclic (scan rate = 100 mV s⁻¹), differential pulse (scan rate = 4 mV s⁻¹) and second harmonic alternating current (scan rate = 25 mV s⁻¹) voltammetry experiments were performed to determine the potentials. The electrochemical measurements were taken for deaerated THF solutions of 2.0 mM Ir or 2.0 mM H employing a three-electrode cell assembly consisting of a Pt disc working electrode, a Pt wire counter electrode, and an Ag/AgNO3 pseudo reference electrode
^f Excited-state oxidation potentials
^g Excited-state reduction potentials
^h Not observed before solvent breakdown
ⁱ Not determined

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